smd type transistors 1 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter www.kexin.com.cn silicon pnp epitaxial planar type 2SB930A features high forward current transfer ratio hfe which has satisfactory linearity. low collector-emitter saturation voltage v ce(sat). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -5 v collector current i c -4 a peak collector current i cp -8 a collector power dissipation p c 1.3 w junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter voltage v ceo i c =-30ma,i b =0 -80 v i ces v ce =-80v,v be = 0 -400 a i ceo v ce =-60v,i b = 0 -700 a emitter-base cutoff current i ebo v eb =-5v,i c =0 -1 ma v ce =-4v,i c = -1 a 70 250 v ce =-4v,i c =-3a 15 base to emitter voltage v be v ce =-4v,i c =-3a -2 v collector-emitter saturation voltage v ce(sat) i c =-4a,i b =-0.4a -1.5 v transition frequency f t v ce =-10v,i c =-0.5a,f=10mhz 20 mhz turn-on time t on 0.2 s storage time t stg 0.5 s fall time t f 0.2 s i c =-4a,i b1 =-0.4a,i b2 =0.4a, v cc =-50v collector cutoff curent forward current transfer ratio h fe h fe classification rank q p h fe 70 150 120 250
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